SIGC121T120R2CS edited by infineon technologies ai ps dd hv3, l 7171 - t , edition 2 , 03.09.2003 igbt chip in npt - technology this chip is used for: igbt modules features: 1200v npt technology 175m chip low turn - off losses short tail current positive temperature coefficient easy paralleling integrated gate resistor applications: drives, smps, resonant applications g c e chip type v ce i cn die size package ordering code SIGC121T120R2CS 1200v 75a 11.08 x 11.08 mm 2 sawn on foil q67050 - a4074 - a003 mechanical parameter: raster size 11.08 x 11.08 emitter pad size 8 x ( 2.99 x 1.97) gate pad size 1.46 x 0.8 area total / active 122.8 / 99.6 mm 2 thickness 175 m wafer size 150 mm flat position 90 grd max.possible chips per wafer 106 pcs passivation frontside photoimide emitter metallization 3200 nm al si 1% colle ctor metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original cont ainer, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC121T120R2CS edited by infineon technologies ai ps dd hv3, l 7171 - t , edition 2 , 03.09.2003 maximum ratings: parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector c urrent, t p limited by t jmax i cpuls 225 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified: value parameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c =4ma 1200 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =75a 2.7 3.2 3.7 gate - emitter threshold voltage v ge(th) i c =3ma , v ge =v ce 4.5 5.5 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 500 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 480 na integrated gate resistor r gint 5 7 w electrical characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss - 5.1 output capacitance c oss - 0.72 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 0.38 nf switching characteristics (test ed at component), inductive load value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) - tbd rise time t r - tbd turn - off delay time t d(off) - tbd fall time t f t j =125 c v cc =600v, i c =75a, v ge = - 15/15v, r g = w - tbd ns 1) values also influenced by parasitic l - and c - in measurement and package.
SIGC121T120R2CS edited by infineon technologies ai ps dd hv3, l 7171 - t , edition 2 , 03.09.2003 chip drawing:
SIGC121T120R2CS edited by infineon technologies ai ps dd hv3, l 7171 - t , edition 2 , 03.09.2003 further electrical characteristics: this chip data sheet refers to the device data sheet tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 a ll rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warra nties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and co nditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for info rmation on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to supp ort and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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